24NM60G-TA3-T - описание и поиск аналогов

UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo

UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo

STB24NM60N N-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET D PAK Features VDSS RDS(on) Order codes ID (@Tjmax) max. STB24NM60N 650 V

STF24NM60N STP24NM60N, STW24NM60N N-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET TO-220FP, TO-220 and TO-247 Features VDSS RDS(on) Order codes ID (@Tjmax) max. STF24NM60N 650 V

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N N-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFETs in TO-220FP, I PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features Order codes VDS @Tjmax RDS(on) max. ID STF24NM60N 3 3 2 2 1 1 STI24NM60N I2PAK TO-220FP 650 V 0.19 17 A STP24NM60N TAB STW24NM60N 100% avalanche tested 3 3 2 L

STL24NM60N N-channel 600 V, 0.200 , 16 A PowerFLAT (8x8) HV MDmesh II Power MOSFET Preliminary data Features VDSS @ RDS(on) Type ID S(3) Bottom view TJmax max S(3) S(3) G(1) STL24NM60N 650 V

STFI24NM60N N-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET in I PAKFP package Datasheet production data Features VDSS RDS(on) Order code ID (@Tjmax) max. STFI24NM60N 650 V

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STB24NM60N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STI24NM60N FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE