FDD86102LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD86102LZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 54 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 42 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 3 V
Carga de compuerta (Qg): 18 nC
Resistencia drenaje-fuente RDS(on): 0.0225 Ohm
Empaquetado / Estuche: TO252_DPAK
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FDD86102LZ Datasheet (PDF)
1.1. fdd86102lz.pdf 
Size:365K _fairchild_semi
October 2010 FDD86102LZ N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m? at VGS = 10 V, ID = 8 A Semiconductors advanced PowerTrench process that has Max rDS(on) = 31 m? at VGS = 4.5 V, ID = 7 A been especially tailored to minimize the on-state resistance and switching loss. G-S
2.1. fdd86102.pdf Size:403K _fairchild_semi
June 2011 FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m? Features Max rDS(on) = 24 m? at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 m? at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rDS(on), swi
4.1. fdd86113lz.pdf Size:239K _fairchild_semi
June 2013 FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A that incorporates Shielded Gate technology. This process has been optimi
4.2. fdd86110.pdf Size:330K _fairchild_semi
December 2014 FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A incorporates Shielded Gate technology. This process has been optimized for th
Otros transistores... FDD8447L_F085 , FDD8451 , FDD8453LZ , FDD8453LZ_F085 , FDD850N10L , STT02N07 , FDD86102 , STT01N20 , J111 , STT01L10 , FDD86250 , FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 .
