FDD86102LZ Todos los transistores

 

FDD86102LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD86102LZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 54 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 42 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 18 nC

Resistencia drenaje-fuente RDS(on): 0.0225 Ohm

Empaquetado / Estuche: TO252, DPAK

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FDD86102LZ Datasheet (PDF)

1.1. fdd86102lz.pdf Size:365K _fairchild_semi

FDD86102LZ
FDD86102LZ

October 2010 FDD86102LZ N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m? at VGS = 10 V, ID = 8 A Semiconductors advanced PowerTrench process that has Max rDS(on) = 31 m? at VGS = 4.5 V, ID = 7 A been especially tailored to minimize the on-state resistance and switching loss. G-S

1.2. fdd86102lz.pdf Size:269K _inchange_semiconductor

FDD86102LZ
FDD86102LZ

isc N-Channel MOSFET Transistor FDD86102LZ ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Conversion ·Inverters ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Volta

 2.1. fdd86102.pdf Size:403K _fairchild_semi

FDD86102LZ
FDD86102LZ

June 2011 FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m? Features Max rDS(on) = 24 m? at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 m? at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rDS(on), swi

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