FDD86102LZ Todos los transistores

 

FDD86102LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD86102LZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0225 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD86102LZ Datasheet (PDF)

 ..1. Size:365K  fairchild semi
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FDD86102LZ

October 2010FDD86102LZN-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m at VGS = 10 V, ID = 8 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 31 m at VGS = 4.5 V, ID = 7 Abeen especially tailored to minimize the on-state resistance and switching

 ..2. Size:579K  onsemi
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FDD86102LZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:748K  cn vbsemi
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FDD86102LZ

FDD86102LZwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless

 ..4. Size:269K  inchange semiconductor
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FDD86102LZ

isc N-Channel MOSFET Transistor FDD86102LZFEATURESStatic drain-source on-resistance:RDS(on)22.5m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC ConversionInvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Volta

Otros transistores... FDD8447LF085 , FDD8451 , FDD8453LZ , FDD8453LZF085 , FDD850N10L , STT02N07 , FDD86102 , STT01N20 , IRF9540N , STT01L10 , FDD86250 , FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 .

History: DHS035N88E | CEP10N6

 

 
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