FDD86102LZ Datasheet. Equivalente

 ..1. Size:365K  fairchild semi
 fdd86102lz.pdf

October 2010 FDD86102LZ N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m at VGS = 10 V, ID = 8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 31 m at VGS = 4.5 V, ID = 7 A been especially tailored to minimize the on-state resistance and switching

 ..2. Size:579K  onsemi
 fdd86102lz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:748K  cn vbsemi
 fdd86102lz.pdf

FDD86102LZ www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless

 ..4. Size:269K  inchange semiconductor
 fdd86102lz.pdf

isc N-Channel MOSFET Transistor FDD86102LZ FEATURES Static drain-source on-resistance RDS(on) 22.5m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC-DC Conversion Inverters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Volta

 6.1. Size:403K  fairchild semi
 fdd86102.pdf

June 2011 FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m Features Max rDS(on) = 24 m at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 m at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rD

 6.2. Size:581K  onsemi
 fdd86102.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:330K  fairchild semi
 fdd86110.pdf

December 2014 FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 10.2 m at VGS = 10 V, ID = 12.5 A incorporates Shielded Gate technology. This process has been optimized for th

 8.2. Size:239K  fairchild semi
 fdd86113lz.pdf

June 2013 FDD86113LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 104 m at VGS = 10 V, ID = 4.2 A that incorporates Shielded Gate technology. This process has been optimi

 8.3. Size:488K  onsemi
 fdd86110.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:465K  onsemi
 fdd86113lz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.5. Size:309K  inchange semiconductor
 fdd86110.pdf

isc N-Channel MOSFET Transistor FDD86110 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.