2N65G-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N65G-TN3-R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO-252
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2N65G-TN3-R Datasheet (PDF)
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Otros transistores... 2N65KG-TMS2-T , 2N65KL-TMS4-T , 2N65KG-TMS4-T , 2N65KL-TN3-R , 2N65KG-TN3-R , 2N65KL-TND-R , 2N65L-AA3-R , 2N65L-TN3-R , IRF630 , 2N65L-TF3T-T , 2N65G-TF3T-T , 2N65L-TM3-T , 2N65G-TM3-T , 2N65G-T6C-K , 2N65L-TMS-T , 2N65G-TMS-T , 2N65L-TMS2-T .
History: SSM6K404TU | SSF1502G5 | RJK5015DPM | PSMN9R0-30LL | MMP3443 | AO6401 | SSM6J501NU
History: SSM6K404TU | SSF1502G5 | RJK5015DPM | PSMN9R0-30LL | MMP3443 | AO6401 | SSM6J501NU



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