2N65G-TN3-R - Даташиты. Аналоги. Основные параметры
Наименование производителя: 2N65G-TN3-R
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 44 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 32 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO-252
Аналог (замена) для 2N65G-TN3-R
2N65G-TN3-R Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
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UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli
Другие MOSFET... 2N65KG-TMS2-T , 2N65KL-TMS4-T , 2N65KG-TMS4-T , 2N65KL-TN3-R , 2N65KG-TN3-R , 2N65KL-TND-R , 2N65L-AA3-R , 2N65L-TN3-R , IRF640N , 2N65L-TF3T-T , 2N65G-TF3T-T , 2N65L-TM3-T , 2N65G-TM3-T , 2N65G-T6C-K , 2N65L-TMS-T , 2N65G-TMS-T , 2N65L-TMS2-T .
History: R6046ANZ1 | R6046FNZC8 | IGLD60R190D1 | IMZA65R048M1H | SMF10N60 | IPA029N06NM5S | IAUC90N10S5N062
History: R6046ANZ1 | R6046FNZC8 | IGLD60R190D1 | IMZA65R048M1H | SMF10N60 | IPA029N06NM5S | IAUC90N10S5N062
Список транзисторов
Обновления
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