FDD86250 Todos los transistores

December 2010 FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 A been especially tailored to minimize the on-state resistance and yet maintain

www.onsemi.com FDD86250_F085 (Note1) N-Channel Sheilded Gate PowerTrench MOSFET 150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS Capability D RoHS Compliant Qualified to AEC Q101 D G Applications Automotive Engine Control S G D-PAK PowerTrain Management TO-252 (TO-252) Solenoid

Isc N-Channel MOSFET Transistor FDD86250 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

May 2013 FDD86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 A incorporates Shielded Gate technology. This process has been optimized for the on-state re

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2010 FDD86102LZ N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m at VGS = 10 V, ID = 8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 31 m at VGS = 4.5 V, ID = 7 A been especially tailored to minimize the on-state resistance and switching

June 2010 FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m Features Max rDS(on) = 23 m at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 37 m at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductor s advanced Power Trench process that has been optimized for

December 2008 FDD8647L N-Channel PowerTrench MOSFET 40 V, 42 A, 9 m Features General Description This N-Channel MOSFET has been produced using Fairchild Max rDS(on) = 9 m at VGS = 10 V, ID = 13 A Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 13 m at VGS = 4.5 V, ID = 11 A deliver low rDS(on) and optimized BVDSS capability to offer superior pe

February 2012 FDD86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 m at VGS = 10 V, ID = 21.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5 m at VGS = 8 V, ID = 19.5 A ringing of DC/DC converters using either synchronous or conventional

December 2014 FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 10.2 m at VGS = 10 V, ID = 12.5 A incorporates Shielded Gate technology. This process has been optimized for th

May 2015 FDD86367_F085 N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers For c

June 2011 FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m Features Max rDS(on) = 24 m at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 m at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rD

June 2013 FDD86113LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 104 m at VGS = 10 V, ID = 4.2 A that incorporates Shielded Gate technology. This process has been optimi

May 2015 FDD86369_F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD86367-F085 N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD86380-F085 N-Channel PowerTrench MOSFET 80 V, 50 A, 13.5 m D Features Typical RDS(on) = 11.2 m at VGS = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A D UIS Capability G G RoHS Compliant S Qualified to AEC Q101 D-PAK TO-252 Applications S (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated S

FDD86567-F085 N-Channel PowerTrench MOSFET 60 V, 100 A, 3.2 m Features Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

FDD86580-F085 N-Channel PowerTrench MOSFET 60 V, 50 A, 10 m Features Typical RDS(on) = 7.8 m at VGS = 10V, ID = 50 A D Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS Compliant D G Qualified to AEC Q101 G Applications S D-PAK Automotive Engine Control TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367 Features www.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 A D UIS Capability This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant G Applications PowerTrain Management S Solenoid and Motor Drivers N-Channel Int

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD86569-F085 N-Channel PowerTrench MOSFET 60 V, 90 A, 5.7 m D Features Typical RDS(on) = 4.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 80 A D UIS Capability G G RoHS Compliant S Qualified to AEC Q101 D-PAK TO-252 Applications S (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starte

FDD86581-F085 N-Channel PowerTrench MOSFET 60 V, 25 A, 15 m Features Typical RDS(on) = 12.3 m at VGS = 10V, ID = 25 A Typical Qg(tot) = 12.6 nC at VGS = 10V, ID = 25 A D UIS Capability RoHS Compliant Qualified to AEC Q101 D G Applications G Automotive Engine Control S D-PAK Powertrain Management TO-252 S (TO-252) Solenoid and Motor Drivers Electronic Steeri

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD86369-F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte

FDD86102LZ www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless

FDD8647L www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RA

isc N-Channel MOSFET Transistor FDD86102LZ FEATURES Static drain-source on-resistance RDS(on) 22.5m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC-DC Conversion Inverters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Volta

isc N-Channel MOSFET Transistor FDD86110 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor FDD86369 FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno