FDD86250 datasheet, подбор замены

 ..1. Size:374K  fairchild semi
 fdd86250.pdf 

December 2010 FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 A been especially tailored to minimize the on-state resistance and yet maintain

 ..2. Size:958K  onsemi
 fdd86250 f085.pdf 

www.onsemi.com FDD86250_F085 (Note1) N-Channel Sheilded Gate PowerTrench MOSFET 150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS Capability D RoHS Compliant Qualified to AEC Q101 D G Applications Automotive Engine Control S G D-PAK PowerTrain Management TO-252 (TO-252) Solenoid

 ..3. Size:262K  inchange semiconductor
 fdd86250.pdf 

Isc N-Channel MOSFET Transistor FDD86250 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 7.1. Size:343K  fairchild semi
 fdd86252.pdf 

May 2013 FDD86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 A incorporates Shielded Gate technology. This process has been optimized for the on-state re

 7.2. Size:568K  onsemi
 fdd86252.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:365K  fairchild semi
 fdd86102lz.pdf 

October 2010 FDD86102LZ N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m at VGS = 10 V, ID = 8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 31 m at VGS = 4.5 V, ID = 7 A been especially tailored to minimize the on-state resistance and switching

 9.2. Size:216K  fairchild semi
 fdd86326.pdf 

June 2010 FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m Features Max rDS(on) = 23 m at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 37 m at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductor s advanced Power Trench process that has been optimized for

 9.3. Size:311K  fairchild semi
 fdd8647l.pdf 

December 2008 FDD8647L N-Channel PowerTrench MOSFET 40 V, 42 A, 9 m Features General Description This N-Channel MOSFET has been produced using Fairchild Max rDS(on) = 9 m at VGS = 10 V, ID = 13 A Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 13 m at VGS = 4.5 V, ID = 11 A deliver low rDS(on) and optimized BVDSS capability to offer superior pe

 9.4. Size:241K  fairchild semi
 fdd86540.pdf 

February 2012 FDD86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 m at VGS = 10 V, ID = 21.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5 m at VGS = 8 V, ID = 19.5 A ringing of DC/DC converters using either synchronous or conventional

 9.5. Size:330K  fairchild semi
 fdd86110.pdf 

December 2014 FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 10.2 m at VGS = 10 V, ID = 12.5 A incorporates Shielded Gate technology. This process has been optimized for th

 9.6. Size:352K  fairchild semi
 fdd86367 f085.pdf 

May 2015 FDD86367_F085 N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers For c

 9.7. Size:403K  fairchild semi
 fdd86102.pdf 

June 2011 FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m Features Max rDS(on) = 24 m at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 m at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rD

 9.8. Size:239K  fairchild semi
 fdd86113lz.pdf 

June 2013 FDD86113LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 104 m at VGS = 10 V, ID = 4.2 A that incorporates Shielded Gate technology. This process has been optimi

 9.9. Size:456K  fairchild semi
 fdd86369 f085.pdf 

May 2015 FDD86369_F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

 9.10. Size:579K  onsemi
 fdd86102lz.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.11. Size:421K  onsemi
 fdd86367-f085.pdf 

FDD86367-F085 N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 9.12. Size:569K  onsemi
 fdd86326.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.13. Size:430K  onsemi
 fdd86380-f085.pdf 

FDD86380-F085 N-Channel PowerTrench MOSFET 80 V, 50 A, 13.5 m D Features Typical RDS(on) = 11.2 m at VGS = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A D UIS Capability G G RoHS Compliant S Qualified to AEC Q101 D-PAK TO-252 Applications S (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated S

 9.14. Size:449K  onsemi
 fdd86567-f085.pdf 

FDD86567-F085 N-Channel PowerTrench MOSFET 60 V, 100 A, 3.2 m Features Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 9.15. Size:426K  onsemi
 fdd86580-f085.pdf 

FDD86580-F085 N-Channel PowerTrench MOSFET 60 V, 50 A, 10 m Features Typical RDS(on) = 7.8 m at VGS = 10V, ID = 50 A D Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS Compliant D G Qualified to AEC Q101 G Applications S D-PAK Automotive Engine Control TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering

 9.16. Size:448K  onsemi
 fdd86540.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:403K  onsemi
 fdd86367.pdf 

MOSFET N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367 Features www.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 A D UIS Capability This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant G Applications PowerTrain Management S Solenoid and Motor Drivers N-Channel Int

 9.18. Size:488K  onsemi
 fdd86110.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.19. Size:1055K  onsemi
 fdd86369.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.20. Size:446K  onsemi
 fdd86569-f085.pdf 

FDD86569-F085 N-Channel PowerTrench MOSFET 60 V, 90 A, 5.7 m D Features Typical RDS(on) = 4.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 80 A D UIS Capability G G RoHS Compliant S Qualified to AEC Q101 D-PAK TO-252 Applications S (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 9.21. Size:2426K  onsemi
 fdd86581-f085.pdf 

FDD86581-F085 N-Channel PowerTrench MOSFET 60 V, 25 A, 15 m Features Typical RDS(on) = 12.3 m at VGS = 10V, ID = 25 A Typical Qg(tot) = 12.6 nC at VGS = 10V, ID = 25 A D UIS Capability RoHS Compliant Qualified to AEC Q101 D G Applications G Automotive Engine Control S D-PAK Powertrain Management TO-252 S (TO-252) Solenoid and Motor Drivers Electronic Steeri

 9.22. Size:581K  onsemi
 fdd86102.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.23. Size:465K  onsemi
 fdd86113lz.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.24. Size:440K  onsemi
 fdd86369-f085.pdf 

FDD86369-F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 9.25. Size:748K  cn vbsemi
 fdd86102lz.pdf 

FDD86102LZ www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless

 9.26. Size:835K  cn vbsemi
 fdd8647l.pdf 

FDD8647L www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RA

 9.27. Size:269K  inchange semiconductor
 fdd86102lz.pdf 

isc N-Channel MOSFET Transistor FDD86102LZ FEATURES Static drain-source on-resistance RDS(on) 22.5m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC-DC Conversion Inverters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Volta

 9.28. Size:309K  inchange semiconductor
 fdd86110.pdf 

isc N-Channel MOSFET Transistor FDD86110 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 9.29. Size:286K  inchange semiconductor
 fdd86369.pdf 

isc N-Channel MOSFET Transistor FDD86369 FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno