2N7002KG-AE2-R Todos los transistores

 

2N7002KG-AE2-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7002KG-AE2-R

Código: KPL_KPG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.5 V

Carga de compuerta (Qg): 5.22 nC

Conductancia de drenaje-sustrato (Cd): 11 pF

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: SOT-23

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2N7002KG-AE2-R Datasheet (PDF)

..1. 2n7002kl-ae2-r 2n7002kg-ae2-r.pdf Size:423K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2N7002K Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typica

6.1. 2n7002kg8.pdf Size:459K _silikron

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2N7002KG8 Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A SOT-363 Sc he mat i c d ia gra m Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating t

7.1. 2n7002ka.pdf Size:87K _philips

2N7002KG-AE2-R
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2N7002KAN-channel TrenchMOS FETRev. 03 25 February 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level compatible Very fast switching Subminiature surface-mounted package Gate-source ElectroStatic Discharge(ESD) protection diodes1

7.2. 2n7002kw.pdf Size:286K _fairchild_semi

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May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking : 7KWAb

 7.3. 2n7002k.pdf Size:222K _fairchild_semi

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January 20122N7002KN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101DSGSOT-23

7.4. 2n7002k.pdf Size:210K _vishay

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2N7002KVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2 at VGS = 10 V60 300 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET

 7.5. 2n7002k.pdf Size:161K _diodes

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2N7002KN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish Matte Tin an

7.6. 2n7002ka.pdf Size:892K _mcc

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2N7002KAFeatures High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch ESD Protected up to 2KV (HBM) Epoxy Meets UL 94 V-0 Flammability RatingN-Channel Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering

7.7. 2n7002k-tp.pdf Size:400K _mcc

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MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2N7002KCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 High density cell design for low RDS(ON) Voltage controlled small signal switch N-Channel MOSFET Rugged and reliable Hig

7.8. 2n7002kdw.pdf Size:382K _mcc

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Features

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Features High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings Operating Junct

7.10. 2n7002k 2v7002k.pdf Size:107K _onsemi

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2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)www.onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V These D

7.11. 2v7002k 2n7002k.pdf Size:64K _onsemi

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2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)www.onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V These D

7.12. 2n7002kw.pdf Size:120K _onsemi

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2N7002KWN-Channel EnhancementMode Field EffectTransistorFeatureswww.onsemi.com Low On-Resistance Low Gate Threshold VoltageD Low Input Capacitance Fast Switching SpeedS Low Input/Output Leakage G Ultra-Small Surface Mount PackageSC-703 LEAD These Devices are Pb-Free and are RoHS CompliantCASE 419AB ESD HBM = 1000 V as per JESD22 A114 a

7.13. 2n7002kt1g.pdf Size:102K _onsemi

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2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)http://onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V Thes

7.14. 2n7002k.pdf Size:159K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2N7002K Preliminary Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS

7.15. 2n7002ku.pdf Size:241K _auk

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2N7002KUN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on)

7.16. 2n7002k.pdf Size:237K _auk

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2N7002KN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on)

7.17. 2n7002ks6.pdf Size:435K _rectron

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2N7002KS6Descriptions N-CHANNEL MOSFET in a SOT-363 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBMApplications Intended for use in general purpose switching and phase control applications. Pi nni ng Equivalent Circuit PIN1 4 S PIN 2 5 G PIN 3 6 D 2018-10/33REV:D Absolute Maximum Ratings(Ta=25

7.18. s2n7002kw.pdf Size:536K _secos

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S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-323FEATURES Low on-resistance Fast switching Speed AL Low-voltage drive 33 Easily designed drive circuits Top View C B11 2 ESD protected:1500V 2K EDH JF GMillimeter MillimeterREF. REF.

7.19. 2n7002kw.pdf Size:527K _secos

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2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 A Advanced Trench Process Technology L High Density Cell Design For Ultra Low On-Resistance

7.20. s2n7002k.pdf Size:1005K _secos

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S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-23 A Suffix of -C specifies halogen & lead-free AL33Top View C BFEATURES 11 23 DRAIN2 Low on resistance. K E Fast switching speed. D Low-voltage drive. 1H JF GGATE* Easily designed drive circuits. Easy to parallel.

7.21. 2n7002k.pdf Size:527K _secos

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2N7002K 0.3A , 60V , RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 AL Advanced Trench Process Technology 33 High Density Cell Design For Ultra Low On-Resista

7.22. 2n7002kdw.pdf Size:425K _secos

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2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363FEATURES A Low on-resistance EL Fast switching Speed 6 5 4 Low-voltage drive Easily designed drive circuits B ESD protected:2000V 1 2 3FC H6 5 4MECHANICAL DATA JD2 G1 S1 D

7.23. tsm2n7002kdcu6.pdf Size:194K _taiwansemi

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TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition: 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa

7.24. tsm2n7002kcx.pdf Size:380K _taiwansemi

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TSM2N7002KCX Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2 FEATURES KEY PERFORMANCE PARAMETERS Low On-Resistance PARAMETER VALUE UNIT ESD Protected 2KV VDS 60 V High Speed Switching VGS = 10V 2 Low Voltage Drive RDS(on) (max) VGS = 4.5V 4 Qg 0.4 nC APPLICATION Logic Level translators DC-DC Converter SOT-23 Note

7.25. tsm2n7002kcu tsm2n7002kcx.pdf Size:237K _taiwansemi

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TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (mA) 2. Source 3. Drain 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RF SOT-23

7.26. 2n7002kw.pdf Size:1922K _jiangsu

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS2N7002KW N-Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 2.5 3 1. GATE2. SOURCE123. DRAINFEATURE APPLICATION High density cell design for Low RDS(on) Voltage controlled sm

7.27. 2n7002k.pdf Size:5156K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS onz Voltage controlled small signal switch 1. GATE 2. SOURCE z Rugged and reliable 3. DRAINz High saturation current capability zESD protected up to 2KV Marking: 72K Equivalent circuit MOSFET

7.28. 2n7002kdw.pdf Size:1310K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5@10V 660V5340mA45.3@4.5V123FEATURE APPLICATION z High density cell design for Low RDS on Load Switch for Portable Devicesz Voltage controlled small signal switch DC/DC Converter z Rugged

7.29. 2n7002ka.pdf Size:552K _kec

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2N7002KASEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LESD Protected 2000V.DIM MILLIMETERS_+High density cell design for low RDS(ON). A 2.93 0.20B 1.30+0.20/-0.15Voltage controlled small signal switch.C 1.30 MAX23 D 0.40+0.15/-0.05Rugged and reliable.E 2.40+0.30/-0.201G 1.90

7.30. 2n7002k.pdf Size:68K _kec

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2N7002KSEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LESD Protected 2000V.DIM MILLIMETERSHigh density cell design for low RDS(ON)._A +2.93 0.20B 1.30+0.20/-0.15Voltage controlled small signal switch.C 1.30 MAX23Rugged and reliable.D 0.45+0.15/-0.05E 2.40+0.30/-0.20High saturation curr

7.31. 2n7002kt.pdf Size:626K _wietron

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2N7002KTN-Channel ENHANCEMENT MODE POWER MOSFET3P b Lead(Pb)-Free12FEATURES:SC-89* Gate-Source ESD Protected: 1500 V* Fast Switching SpeedDrain* Low On-Resistance* Low Voltage Driver3APPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits1 (Top View) 2* Load/Power Switching Ce

7.32. 2n7002k.pdf Size:335K _wietron

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2N7002KN-Channel Enhancement 3 DRAINMode Power MOSFET31P b Lead(Pb)-Free1GATE *2* Gate Pretection DiodeSOURCE 2SOT-23Features:* Low on-resistance.* Fast switching speed.* Low-voltage drive.* Easily designed drive circuits.* Easy to parallel.* Pb-Free package is available.* Esd Protected:2000VMaximum Ratings(T = 25 Unless Otherwise Specified)A

7.33. 2n7002kdw.pdf Size:161K _wietron

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2N7002KDWDual N-Channel MOSFET65P b Lead(Pb)-Free 4123Features:* Low On-ResistanceSOT-363(SC-88)* Fast Switching Speed* Low-voltage drive6 5 4* Easily designed drive circuitsD2 G1 S1* ESD Protected:2000VMechanical Data:*Case: SOT-363, Molded Plastic*Case Material-UL Flammability Rating 94V-0S2 G2 D1*Terminals: Solderable per MIL-STD-202, Method 2081 2

7.34. h2n7002k.pdf Size:136K _hsmc

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Spec. No. : MOS200803 HI-SINCERITY Issued Date : 2005.03.13 Revised Date :2010,03,04 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage .........................................................................................................

7.35. h2n7002ksn.pdf Size:156K _hsmc

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Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 33-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: DrainN-CHANNEL TRANSISTOR 21Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drai

7.36. ap2n7002ku.pdf Size:100K _ape

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AP2N7002KUHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mAS RoHS Compliant & Halogen-FreeSOT-323GDDescriptionAP2N7002 series are from Advanced Power innovated designGand silicon process technology to achieve th

7.37. ap2n7002k-hf.pdf Size:58K _ape

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AP2N7002K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mAS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist

7.38. 2n7002k.pdf Size:814K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N7002KN-Channel High Density Trench MOSFET (60V, 0.5A) PRODUCT SUMMARY VDSS ID RDS(on) (ohm) Max 3 @ VGS = 10V, ID=0.5A 60V 0.5A 5 @ VGS = 5V, ID=0.05A Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV 2N7002K Pin Assignment & Symbol

7.39. 2n7002kb.pdf Size:502K _silikron

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2N7002KB Main Product Characteristics: VDSS 60V RDS(on) 2(max.) ID 0.3A Marking and pin SOT-23 Schema t ic diag r am Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

7.40. br2n7002k2.pdf Size:1033K _blue-rocket-elect

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BR2N7002K2 Rev.C Aug.-2018 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KVSensitive gate trigger current and Low Holding current.ESD protected up to 2KV.HF Product. / Applications

7.41. l2n7002kn3t5g.pdf Size:722K _lrc

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L2N7002KDW1T1GS-L2N7002KDW1T1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected2. D

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LESHAN RADIO COMPANY, LTD.Small Signal MOSFET L2N7002KLT1G380 mAmps, 60 Volts NChannel SOT23 S-L2N7002KLT1GFEATURES31)ESD Protected2)Low RDS(on)13)Surface Mount Package24)This is a Pb-Free Device5)We declare that the material of product compliant withSOT23RoHS requirements and Halogen Free.6) S- Prefix for Automotive and Other Applications RequiringUn

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SMD Type MOSFETN-Channel Enhancement MOSFET2N7002KSOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features3Low On-Resistance: RDS(ON)Low Gate Threshold VoltageLow Input Capacitance1 2D rain+0.02+0.10.15 -0.020.95 -0.1Fast Switching Speed+0.11.9-0.2Low Input/Output Leakage ESD Protected 2KV HBMGate1.Base1 GATE2.Emitter2 SOURCEGateProtect

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SMD Type MOSFETN-Channel Enhancement MOSFET2N7002KSOT-23Unit: mm+0.12.9 -0.1Features+0.10.4 -0.13Low On-Resistance: RDS(ON)Low Gate Threshold VoltageLow Input CapacitanceD rain1 2Fast Switching Speed+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Low Input/Output Leakage ESD Protected 2KV HBMGate1.Base1 GATE2.Emitter2 SOURCEGateProtectio

7.46. 2n7002kw.pdf Size:275K _panjit

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2N7002KW60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, La

7.47. 2n7002k.pdf Size:226K _panjit

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2N7002K60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=40.120(3.04)0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition0.056(1.40) Specially Designed for Battery Operated Systems, Solid-State R

7.48. 2n7002kdw.pdf Size:304K _panjit

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2N7002KDW60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, L

7.49. 2n7002ktb.pdf Size:261K _panjit

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2N7002KTB60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition0.052(1.30)0.024(0.60) Specially Designed for Battery Operated Systems, Solid-State Relays0.

7.50. am2n7002k.pdf Size:520K _ait_semi

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AiT Semiconductor Inc. AM2N7002K www.ait-ic.com MOSFET SMALL SIGNAL MOSFET 380mA, 60 VOLTS DESCRIPTION FEATURES The AM2N7002K is available in SOT-23 Package ESD Protected Low R DS(ON) Surface Mount Package RoHS Compliant Available in SOT-23 package ORDERING INFORMATION APPLICATION Low Side Load Switch Package Type Part Number Level Shift Circ

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2N7002KG-AE2-R
2N7002KG-AE2-R

CMT2N7002K SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast sw

7.52. 2n7002k.pdf Size:284K _galaxy

2N7002KG-AE2-R
2N7002KG-AE2-R

Product specification 4V Drive Nch MOS FET 2N7002K FEATURES Low on-resistance. Pb High ESD. Lead-free High-speed switching. Low-voltage drive(4V). Drive circuits can be simple. Parallel use is easy. APPLICATIONS N-channel enhancement mode effect transistor. SOT-23 Switching application. ORDERING INFORMATION Type No. Marking Packag

7.53. 2n7002k.pdf Size:593K _goodark

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002K 60V N-Channel MOSFET FEATURES VDS=60V, ID=0.3ARDS(ON)

7.54. k2n7002k.pdf Size:771K _kodenshi

2N7002KG-AE2-R
2N7002KG-AE2-R

K2N7002K N-Channel Enhancement Mode MOSFET 2018.04.18 2018.04.18 2018.04.18 2018.04.18 1 000 2017.10.18 2 001 2018.04.18 3 1 of 7 AUK Dalian K2N7002K N-Channel Enh

7.55. 2n7002k.pdf Size:226K _ncepower

2N7002KG-AE2-R
2N7002KG-AE2-R

Pb Free Producthttp://www.ncepower.com 2N7002KNCE N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON)

7.56. 2n7002kd.pdf Size:907K _fuxinsemi

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002KDN-Channel SMD MOSFET ESD ProtectionProduct Summary V(BR)DSS RDS(on)MAX ID 5.0@10V 60V 0.34A 5.3@4.5V Feature Application High density cell design for ultra low on-resistance Load Switch for Portable Devices Voltage controlled small signal switch DC/DC Converter Rugged and reliable High saturation current capability ESD protected Package Circuit diagram

7.57. 2n7002k.pdf Size:2536K _fuxinsemi

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002KN-Channel SMD MOSFET ESD ProtectionProduct Summary V(BR)DSS RDS(on)MAX ID 2.8@10V 60V 0.34A 3.6@4.5V Feature Application ESD protection Specially designed for battery operated system, Advanced trench process technology solid-state relays drivers,relays,displays,lamps, High density cell design for ultra low on-resistance solenoids,memories,etc. Very low leaka

7.58. et2n7002k.pdf Size:856K _eternal

2N7002KG-AE2-R
2N7002KG-AE2-R

Eternal Semiconductor Inc. ET2N7002KN-Channel High Density Trench MOSFET (60V,0.5A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ2.5 @ VGS = 10V, ID=0.5A60V 500mA3.0 @ VGS = 5V, ID=0.05AFeatures High speed switch Advanced Trench Process Technology SOT-23 package ESD protected up to 2KV LeadPb-free and halogen-freeDrainET2N7002K Pin Assignment & Symbo

7.59. 2n7002k.pdf Size:749K _guangdong_hottech

2N7002KG-AE2-R
2N7002KG-AE2-R

Plastic-Encapsulate DiodesFEATURE 2N7002K High density cell design for low RDS(ON) N-Channel MOSFET Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD Protected Up To 2k VMAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit1.GateDrain-Source Voltage VDS 60 V 2.SourceSOT-233.DrainGate-Sou

7.60. hss2n7002k.pdf Size:1899K _huashuo

2N7002KG-AE2-R
2N7002KG-AE2-R

HSS2N7002K N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V We declare that the material of product compliance with Rohs requirements and RDS(ON),max 2 Halogen Free. ESD protected ID 0.3 A Low RDS(on) SOT23 Pin Configuration l Low side load switch l Level shift circutis l DC-DC converter l Portable applications i.e. DSC, PDA, Cell Phone,

7.61. 2n7002k.pdf Size:2735K _high_diode

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002KSOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID V(BR)DSS RDS(on)MAX SOT- 235@10VD60VmA340@4.5V5.3SFeatures High density cell design for Low RDS onGVoltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Applications Load

7.62. 2n7002kt.pdf Size:1171K _leiditech

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002KT SOT-523 Plastic-Encapsulate Mosfets Features Gate 1 High density cell design for low R DS (ON) Voltage controlled small signal switch 3 Drain Rugged and reliable High saturation current capability Source 2Applications (Top View) Load Switch for Portable Devices DC/DC Converter Marking: KN Maximum Ratings (T =25C unless otherwise spe

7.63. 2n7002k.pdf Size:1318K _jestek

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002K60V,0.34AN-Channel MosfetSOT-23FEATURESRDS(ON) 2.3 @VGS=10V RDS(ON)2.7 @VGS=4.5VAPPLICATIONSPortable appliancesMARKING N-CHANNEL MOSFET7002:Device CodeMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 60VGate-Source Voltage VGS 20I 0.34D*Continuous Drain Current*Pulsed Drain Current*

7.64. 2n7002k.pdf Size:1632K _mdd

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002KSOT-23 Plastic-Encapsulate MOSFETS60V N-Channel Enhancement Mode MOSFETV(BR)DSS RDS(on)Typ ID MAX SO T -23 30.9@10V60VmA500@4.5V1.1 1. GATE 2. SOURCE 123. DRAINFEATURE APPLICATION Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch Rugged and reliable

7.65. 2n7002kw.pdf Size:319K _powersilicon

2N7002KG-AE2-R
2N7002KG-AE2-R

DATA SHEET 2N7002KW N-CHANNELENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 300 mA FEATURES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, DESIGNED FOR HIGH SPEED PULSE AMPLIFIER AND DRIVE APPLICATION. ESD MIL-STD883 ,1KV CONTACT DISCHARGE COMPLIANT PROTECTION. LEAD FREE AND HALOGEN-FREE. MECHANICAL DATA HIGDENSITY CELL DESIGN FOR LOW RDS

7.66. 2n7002k.pdf Size:1928K _cn_puolop

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002KN-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, RDS(ON) = 4(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 4(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. ESD protected up to 2K V1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Comp

7.67. 2n7002k.pdf Size:499K _wpmtek

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002K 60V/0.3A N Channel Advanced Power MOSFET Features Low RDS(on) @VGS=10V V R Typ I Max (BR)DSS DS(ON) D 5V Logic Level Control2.2 @ 10V N Channel SOT23 Package60V 0.3A HMB ESD Protection 2KV2.8 @ 4.5V Pb-Free, RoHS CompliantApplications Logic level translators High-speed line drivers Low-side load switch Switching circu

7.68. 2n7002kw.pdf Size:302K _cn_yfw

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002KW SOT-323 N-Channel Enhancement MOSFET3FeaturesLow On-Resistance: RDS(ON)Low Gate Threshold Voltage21.GateLow Input Capacitance2.SourceFast Switching Speed 3.Drain1Low Input/Output Leakage Simplified outline(SOT-323) ESD Protected 2KV HBMDrainGate GateProtectionSourceDiodeAbsolute Maximum Ratings Ta=25Parameter Symbol Rating UnitDrain

7.69. 2n7002k.pdf Size:801K _cn_zre

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002K MOSFET(N-Channel) SOT-23 V(BR)DSS RDS(ON)MAX ID SOT-23 Plastic-Encapsulate MOSFET 5@10V 60V 340mA 5.3@4.5V Features SOT-23 High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ESD protected Load Switch for Portable

7.70. wst2n7002k.pdf Size:876K _winsok

2N7002KG-AE2-R
2N7002KG-AE2-R

WST2N7002K N-Ch MOSFETProduct SummeryGeneral Description The WST2N7002K is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 1 300mAgate charge for most of the small power switching and load switch applications. Applications The WST2N7002K meet the RoHS and Green Product requirement with

7.71. se2n7002k.pdf Size:281K _cn_sino-ic

2N7002KG-AE2-R
2N7002KG-AE2-R

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2N7002K 60V,300mA N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 300mA on-resistance and cost-effectiveness. RDS(ON)

7.72. vs2n7002k.pdf Size:649K _cn_vanguard

2N7002KG-AE2-R
2N7002KG-AE2-R

VS2N7002K 60V/760mA N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),typ@VGS=10V 1 N-Channel R DS(on),typ@VGS=4.5V 1.1 Enhancement Mode I D 0.76 A Fast Switching ESD Protected by HBM up to 2.5KV SOT23 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS2N7002K SOT23 72K 3000pcs/reel

7.73. 2n7002kb.pdf Size:841K _cn_vbsemi

2N7002KG-AE2-R
2N7002KG-AE2-R

2N7002KBwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

7.74. 2n7002kdw.pdf Size:1929K _cn_tech_public

2N7002KG-AE2-R
2N7002KG-AE2-R

V2.5

7.75. 2n7002k.pdf Size:674K _cn_yangzhou_yangjie_elec

2N7002KG-AE2-R
2N7002KG-AE2-R

RoHS COMPLIANT 2N7002K N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance F

7.76. 2n7002kdw.pdf Size:837K _cn_yangzhou_yangjie_elec

2N7002KG-AE2-R
2N7002KG-AE2-R

RoHS COMPLIANT 2N7002KDW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance

7.77. ttx2n7002ka.pdf Size:629K _cn_wuxi_unigroup

2N7002KG-AE2-R
2N7002KG-AE2-R

TTX2N7002KA Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) 2 ID (at VGS =10V) 0.35A Low Gate Charge RDS(ON) (at VGS =10V)

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