All MOSFET. 2N7002KG-AE2-R Datasheet

 

2N7002KG-AE2-R Datasheet and Replacement


   Type Designator: 2N7002KG-AE2-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT-23
 

 2N7002KG-AE2-R substitution

   - MOSFET ⓘ Cross-Reference Search

 

2N7002KG-AE2-R Datasheet (PDF)

 ..1. Size:423K  utc
2n7002kl-ae2-r 2n7002kg-ae2-r.pdf pdf_icon

2N7002KG-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002K Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typica

 6.1. Size:459K  silikron
2n7002kg8.pdf pdf_icon

2N7002KG-AE2-R

2N7002KG8 Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A SOT-363 Sc he mat i c d ia gra m Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating t

 7.1. Size:87K  philips
2n7002ka.pdf pdf_icon

2N7002KG-AE2-R

2N7002KAN-channel TrenchMOS FETRev. 03 25 February 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level compatible Very fast switching Subminiature surface-mounted package Gate-source ElectroStatic Discharge(ESD) protection diodes1

 7.2. Size:286K  fairchild semi
2n7002kw.pdf pdf_icon

2N7002KG-AE2-R

May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking : 7KWAb

Datasheet: 2N65L-T2Q-T , 2N65G-T2Q-T , 2N65L-T60-K , 2N65G-T60-K , 2N65L-T6C-K , 2N65G-K08-5060-R , 2N7002G-AE2-R , 2N7002KL-AE2-R , AON7410 , 2N7002ZDWG-AL6-R , 2N80L-TA3-T , 2N80G-TA3-T , 2N80L-TF1-T , 2N80G-TF1-T , 2N80L-TF2-T , 2N80G-TF2-T , 2N80L-TF3-T .

History: EFC6604R | PT4606 | APT6011B2VFRG | SLF70R420S2 | NTMFS0D55N03CG | 5N65KG-TMS-T | VBM17R10

Keywords - 2N7002KG-AE2-R MOSFET datasheet

 2N7002KG-AE2-R cross reference
 2N7002KG-AE2-R equivalent finder
 2N7002KG-AE2-R lookup
 2N7002KG-AE2-R substitution
 2N7002KG-AE2-R replacement

 

 
Back to Top

 


 
.