FDD8780 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD8780 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
📄📄 Copiar
Búsqueda de reemplazo de FDD8780 MOSFET
- Selecciónⓘ de transistores por parámetros
FDD8780 datasheet
fdd8780 fdu8780.pdf
March 2006 FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5m General Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be
fdd8782 fdu8782.pdf
November 2009 FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11m General Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be
fdd8782.pdf
FDD8782 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLU
fdd8796 fdu8796.pdf
March 2006 FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7m General Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be
Otros transistores... STT01N20, FDD86102LZ, STT01L10, FDD86250, FDD86326, FDD8647L, FDD8770, FDD8778, AON7506, FDD8782, FDD8796, FDD8870, STT01L07, FDD8870F085, STS8816, FDD8874, STS6N20
Parámetros del MOSFET. Cómo se afectan entre sí.
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CEZC2P07 | CEZ2R05 | CEU3133 | CES2361 | CES2312A | CEP100N10L | CEM3425 | CEM3139 | CEM3133 | CEM3115 | CED3133 | CEC3257 | CEC2533 | CEB100N10L | BC3134KT | BC3134K
Popular searches
bc547c | 2sa726 | 2sd313 | 2sc536 | d718 transistor | irfp250n datasheet | 2n5550 | 2sd1047
