FDD8780 Datasheet. Specs and Replacement

Type Designator: FDD8780  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO252 DPAK

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FDD8780 substitution

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FDD8780 datasheet

 ..1. Size:314K  fairchild semi
 fdd8780 fdu8780.pdf pdf_icon

FDD8780

March 2006 FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5m General Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be... See More ⇒

 8.1. Size:418K  fairchild semi
 fdd8782 fdu8782.pdf pdf_icon

FDD8780

November 2009 FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11m General Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be... See More ⇒

 8.2. Size:899K  cn vbsemi
 fdd8782.pdf pdf_icon

FDD8780

FDD8782 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLU... See More ⇒

 9.1. Size:308K  fairchild semi
 fdd8796 fdu8796.pdf pdf_icon

FDD8780

March 2006 FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7m General Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be... See More ⇒

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Detailed specifications: STT01N20, FDD86102LZ, STT01L10, FDD86250, FDD86326, FDD8647L, FDD8770, FDD8778, AON7506, FDD8782, FDD8796, FDD8870, STT01L07, FDD8870F085, STS8816, FDD8874, STS6N20

Keywords - FDD8780 MOSFET specs

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