FDD8870F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD8870F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 91 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
Paquete / Cubierta: TO252 DPAK
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FDD8870F085 Datasheet (PDF)
fdd8870 f085.pdf

Jan 2013FDD8870_F085N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized for l
fdd8870 fdu8870.pdf

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op
fdd8870 fdu8870.pdf

September 2004FDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9m General Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o
Otros transistores... FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 , FDD8870 , STT01L07 , IRFP250 , STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STS6601 , FDD8880 .
History: AOTF262L | BR80N75 | HUF76409D3S
History: AOTF262L | BR80N75 | HUF76409D3S



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