FDD8870F085 Datasheet and Replacement
Type Designator: FDD8870F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 91 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO252 DPAK
FDD8870F085 substitution
FDD8870F085 Datasheet (PDF)
fdd8870 f085.pdf

Jan 2013FDD8870_F085N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized for l
fdd8870 fdu8870.pdf

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op
fdd8870 fdu8870.pdf

September 2004FDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9m General Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o
Datasheet: FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 , FDD8870 , STT01L07 , IRFP250 , STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STS6601 , FDD8880 .
History: IRF640S | IXFA18N60X | BRCS5N50YU
Keywords - FDD8870F085 MOSFET datasheet
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History: IRF640S | IXFA18N60X | BRCS5N50YU



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