FDD8874 Todos los transistores

 

FDD8874 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD8874
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 116 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD8874 datasheet

 ..1. Size:659K  fairchild semi
fdd8874 fdu8874.pdf pdf_icon

FDD8874

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been

 ..2. Size:266K  inchange semiconductor
fdd8874.pdf pdf_icon

FDD8874

isc N-Channel MOSFET Transistor FDD8874 FEATURES Drain Current I = 116A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 5.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.1. Size:331K  fairchild semi
fdd8870 f085.pdf pdf_icon

FDD8874

Jan 2013 FDD8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A controllers. It has been optimized for l

 8.2. Size:486K  fairchild semi
fdd8870 fdu8870.pdf pdf_icon

FDD8874

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op

Otros transistores... FDD8778 , FDD8780 , FDD8782 , FDD8796 , FDD8870 , STT01L07 , FDD8870F085 , STS8816 , IRFP450 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , FDD8882 .

 

 

 


 
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