FDD8874 Datasheet. Specs and Replacement

Type Designator: FDD8874  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 116 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm

Package: TO252 DPAK

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FDD8874 substitution

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FDD8874 datasheet

 ..1. Size:659K  fairchild semi
fdd8874 fdu8874.pdf pdf_icon

FDD8874

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been... See More ⇒

 ..2. Size:266K  inchange semiconductor
fdd8874.pdf pdf_icon

FDD8874

isc N-Channel MOSFET Transistor FDD8874 FEATURES Drain Current I = 116A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 5.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 8.1. Size:331K  fairchild semi
fdd8870 f085.pdf pdf_icon

FDD8874

Jan 2013 FDD8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A controllers. It has been optimized for l... See More ⇒

 8.2. Size:486K  fairchild semi
fdd8870 fdu8870.pdf pdf_icon

FDD8874

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op... See More ⇒

Detailed specifications: FDD8778, FDD8780, FDD8782, FDD8796, FDD8870, STT01L07, FDD8870F085, STS8816, NCEP15T14, STS6N20, FDD8876, STS6604L, FDD8878, STS6601, FDD8880, STS6415, FDD8882

Keywords - FDD8874 MOSFET specs

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