FDD8882 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD8882  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 55 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: TO252 DPAK

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FDD8882 datasheet

 ..1. Size:429K  fairchild semi
 fdd8882 fdu8882 fdu8882.pdf pdf_icon

FDD8882

2 April 2008 FDD8882 / FDU8882 tm N-Channel PowerTrench MOSFET 30V, 55A, 11.5m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 15m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op

 8.1. Size:498K  fairchild semi
 fdd8880.pdf pdf_icon

FDD8882

N April 2008 FDD8880 tm N-Channel PowerTrench MOSFET 30V, 58A, 9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 12m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for

 8.2. Size:532K  onsemi
 fdd8880.pdf pdf_icon

FDD8882

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:846K  cn vbsemi
 fdd8880.pdf pdf_icon

FDD8882

FDD8880 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOLUT

MOSTRAR MÁS

Otros transistores... FDD8874, STS6N20, FDD8876, STS6604L, FDD8878, STS6601, FDD8880, STS6415, IRF2807, STS6409, FDD8896, STS6308, FDD8896F085, STS4622, FDD8N50NZ, FDG1024NZ, FDG327N