FDD8882 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD8882
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
Paquete / Cubierta: TO252 DPAK

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FDD8882 Datasheet (PDF)

..1. Size:429K fairchild semi
fdd8882 fdu8882 fdu8882.pdf

2April 2008FDD8882 / FDU8882tmN-Channel PowerTrench MOSFET30V, 55A, 11.5mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 15m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

8.1. Size:498K fairchild semi
fdd8880.pdf

NApril 2008FDD8880 tmN-Channel PowerTrench MOSFET30V, 58A, 9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 12m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for

8.2. Size:532K onsemi
fdd8880.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.3. Size:846K cn vbsemi
fdd8880.pdf

FDD8880www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOLUT

Otros transistores... FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , K2611 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N .

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