FDD8882 MOSFET Datasheet: N-Ch, 30V, 55A. Full specification with pinout and replacement list

FDD8882 Specs and Replacement

Type Designator: FDD8882

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO252 DPAK

FDD8882 substitution

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FDD8882 datasheet

..1. Size:429K fairchild semi
fdd8882 fdu8882 fdu8882.pdf pdf_icon

2 April 2008 FDD8882 / FDU8882 tm N-Channel PowerTrench MOSFET 30V, 55A, 11.5m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 15m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op... See More ⇒

8.1. Size:498K fairchild semi
fdd8880.pdf pdf_icon

N April 2008 FDD8880 tm N-Channel PowerTrench MOSFET 30V, 58A, 9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 12m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for ... See More ⇒

8.2. Size:532K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

8.3. Size:846K cn vbsemi
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FDD8880 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOLUT... See More ⇒

Detailed specifications: FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , 10N65 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N .