All MOSFET. FDD8882 Datasheet

 

FDD8882 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD8882
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO252 DPAK

 FDD8882 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD8882 Datasheet (PDF)

 ..1. Size:429K  fairchild semi
 fdd8882 fdu8882 fdu8882.pdf

FDD8882 FDD8882

2April 2008FDD8882 / FDU8882tmN-Channel PowerTrench MOSFET30V, 55A, 11.5mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 15m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 8.1. Size:498K  fairchild semi
 fdd8880.pdf

FDD8882 FDD8882

NApril 2008FDD8880 tmN-Channel PowerTrench MOSFET30V, 58A, 9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 12m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for

 8.2. Size:532K  onsemi
 fdd8880.pdf

FDD8882 FDD8882

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:846K  cn vbsemi
 fdd8880.pdf

FDD8882 FDD8882

FDD8880www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOLUT

Datasheet: FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , IRF830 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N .

 

 
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