4N80G-T2Q-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N80G-T2Q-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 106 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 75 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Encapsulados: TO262
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4N80G-T2Q-T datasheet
4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-t2q-t 4n80g-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 1 TO-251 TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and 1 1 DMOS technology. This technology is specialized in allowing a TO-220F1 TO-262 minimum on-state resistance, and superior switching per
4n80l-tma-t 4n80g-tma-t 4n80l-tma8-t 4n80g-tma8-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r 4n80l-t2q-t 4n80g-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80-FC Power MOSFET 4A, 800V N-CHANNEL POWER MOSFET 1 1 TO-220F1 TO-220F DESCRIPTION The UTC 4N80-FC provide excellent R , low gate DS(ON) charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 TO-220F2 * R 3.7 @ V =10V, I =2.0A DS(ON) GS D * Low
Otros transistores... 4N70G-T2Q-T , 4N80L-TA3-T , 4N80G-TA3-T , 4N80L-TF1-T , 4N80G-TF1-T , 4N80L-TF2-T , 4N80G-TF2-T , 4N80L-T2Q-T , IRF1407 , 4N80L-TF3-T , 4N80G-TF3-T , 4N80L-TM3-T , 4N80G-TM3-T , 4N80L-TN3-R , 4N80G-TN3-R , 4N80L-TND-R , 4N80G-TND-R .
History: AOW25S65 | WMQ20DN06TS | SFG10R10BF
History: AOW25S65 | WMQ20DN06TS | SFG10R10BF
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