4N80G-T2Q-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 4N80G-T2Q-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 106 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 75 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
Тип корпуса: TO262
Аналог (замена) для 4N80G-T2Q-T
4N80G-T2Q-T Datasheet (PDF)
4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-t2q-t 4n80g-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 11TO-251TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and 11DMOS technology. This technology is specialized in allowing a TO-220F1TO-262minimum on-state resistance, and superior switching per
4n80l-tma-t 4n80g-tma-t 4n80l-tma8-t 4n80g-tma8-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r 4n80l-t2q-t 4n80g-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80-FC Power MOSFET 4A, 800V N-CHANNEL POWER MOSFET 11TO-220F1TO-220F DESCRIPTION The UTC 4N80-FC provide excellent R , low gate DS(ON)charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 TO-220F2* R 3.7 @ V =10V, I =2.0A DS(ON) GS D* Low
4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 11TO-251TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and 11DMOS technology. This technology is specialized in allowing a TO-220F1TO-262minimum on-state resistance, and superior switching per
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Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918