50N06G-TA3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 50N06G-TA3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 60 nC
trⓘ - Tiempo de subida: 180 nS
Cossⓘ - Capacitancia de salida: 430 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET 50N06G-TA3-T
50N06G-TA3-T Datasheet (PDF)
50n06l-ta3-t 50n06g-ta3-t 50n06l-tf3-t 50n06g-tf3-t 50n06l-tf3t-t 50n06g-tf3t-t 50n60l-tm3-t 50n60g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-263 TO-251The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 11It is mainly suitable electronic
50n06l-tn3-r 50n06g-tn3-r 50n06l-tnd-r 50n06g-tnd-r 50n06l-tq2-t 50n06g-tq2-t 50n06l-tq2-r 50n06g-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-263 TO-251The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 11It is mainly suitable electronic
50n06a 50n06af 50n06f 50n06g.pdf
RoHS 50N06 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(50A, 60Volts)DESCRIPTIOND The Nell 50N06 is a three-terminal silicon Ddevice with current conduction capabilityof 50A, fast switching speed, low on-stateresistance, breakdown voltage rating of 60V,and max. threshold voltage of 4 volts.GS They are designed for use in applications
50n06 50n06f 50n06b 50n06h 50n06g 50n06d.pdf
50N06(F,B,H,G,D)50 Amps,60 Volts N-CHANNEL MOSFETFEATURE 50A,60V,R =17.5m@VGS=10V/25ADS(ON)MAXR =20m@VGS=4.5V/25ADS(ON)MAX Low gate charge Low CissTO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capabilityTO-263 TO-252 TO-25150N06B 50N06G 50N06DAbsolute Maximum Ratings(T =25,unless otherwi
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
