50N06G-TA3-T. Аналоги и основные параметры
Наименование производителя: 50N06G-TA3-T
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 180 ns
Cossⓘ - Выходная емкость: 430 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: TO220
Аналог (замена) для 50N06G-TA3-T
- подборⓘ MOSFET транзистора по параметрам
50N06G-TA3-T даташит
50n06l-ta3-t 50n06g-ta3-t 50n06l-tf3-t 50n06g-tf3-t 50n06l-tf3t-t 50n06g-tf3t-t 50n60l-tm3-t 50n60g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 TO-251 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 1 It is mainly suitable electronic
50n06l-tn3-r 50n06g-tn3-r 50n06l-tnd-r 50n06g-tnd-r 50n06l-tq2-t 50n06g-tq2-t 50n06l-tq2-r 50n06g-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 TO-251 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 1 It is mainly suitable electronic
50n06a 50n06af 50n06f 50n06g.pdf
RoHS 50N06 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (50A, 60Volts) DESCRIPTION D The Nell 50N06 is a three-terminal silicon D device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. G S They are designed for use in applications
50n06 50n06f 50n06b 50n06h 50n06g 50n06d.pdf
50N06(F,B,H,G,D) 50 Amps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,R =17.5m @VGS=10V/25A DS(ON)MAX R =20m @VGS=4.5V/25A DS(ON)MAX Low gate charge Low C iss TO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capability TO-263 TO-252 TO-251 50N06B 50N06G 50N06D Absolute Maximum Ratings(T =25 ,unless otherwi
Другие IGBT... 4N90G-TF3T-T, 4N90L-TM3-T, 4N90G-TM3-T, 4N90L-TN3-R, 4N90G-TN3-R, 4N90L-T3N-T, 4N90G-T3N-T, 50N06L-TA3-T, EMB04N03H, 50N06L-TF3-T, 50N06G-TF3-T, 50N06L-TF3T-T, 50N06G-TF3T-T, 50N60L-TM3-T, 50N60G-TM3-T, 50N06L-TN3-R, 50N06G-TN3-R
History: VBK3215N | VBK362K
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Список транзисторов
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