5N50G-TF3-T Todos los transistores

 

5N50G-TF3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 5N50G-TF3-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

5N50G-TF3-T Datasheet (PDF)

 ..1. Size:235K  utc
5n50l-tf3-t 5n50g-tf3-t 5n50l-tf1-t 5n50g-tf1-t 5n50l-tn3-r 5n50g-tn3-r 5n50l-t2q-t 5n50g-t2q-t.pdf pdf_icon

5N50G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220FTO-262The UTC 5N50 is an N-channel power MOSFET adopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance.

 9.1. Size:345K  trinnotech
tmd5n50 tmd5n50g tmu5n50 tmu5n50g.pdf pdf_icon

5N50G-TF3-T

TMD5N50/TMU5N50TMD5N50G/TMU5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DI-PAKD-PAKGSDevice Package Marking RemarkTMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS

 9.2. Size:925K  cn sinai power
spd5n50g.pdf pdf_icon

5N50G-TF3-T

SPD5N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=5A(Vgs=10V) R max. at 25oC () V =10V 1.5DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 12 gs 100% Avalanche Tested Q (nC) 6.5 gd RoHS compliant Configuration single Ap

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2SK1279 | IRL3714LPBF

 

 
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