5N50G-TF3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 5N50G-TF3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 38 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 70 pF
Resistencia entre drenaje y fuente RDS(on): 1.4 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET 5N50G-TF3-T
5N50G-TF3-T Datasheet (PDF)
5n50l-tf3-t 5n50g-tf3-t 5n50l-tf1-t 5n50g-tf1-t 5n50l-tn3-r 5n50g-tn3-r 5n50l-t2q-t 5n50g-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220FTO-262The UTC 5N50 is an N-channel power MOSFET adopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance.
tmd5n50 tmd5n50g tmu5n50 tmu5n50g.pdf
TMD5N50/TMU5N50TMD5N50G/TMU5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DI-PAKD-PAKGSDevice Package Marking RemarkTMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS
spd5n50g.pdf
SPD5N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=5A(Vgs=10V) R max. at 25oC () V =10V 1.5DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 12 gs 100% Avalanche Tested Q (nC) 6.5 gd RoHS compliant Configuration single Ap
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
