FDG332PZ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDG332PZ  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm

Encapsulados: SC70

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FDG332PZ datasheet

 ..1. Size:216K  fairchild semi
 fdg332pz.pdf pdf_icon

FDG332PZ

December 2008 FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m Features General Description This P-Channel MOSFET uses Fairchild s advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6A voltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2A battery power management applications. Max rDS(on) = 160m at VG

 ..2. Size:566K  onsemi
 fdg332pz.pdf pdf_icon

FDG332PZ

July 2007 FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m Features General Description This P-Channel MOSFET uses Fairchild s advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6A voltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2A battery power management applications. Max rDS(on) = 160m at VGS =

 9.1. Size:150K  fairchild semi
 fdg330p.pdf pdf_icon

FDG332PZ

December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2 A, 12 V. RDS(ON) = 110 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 150 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 215 m @ VGS

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