FDG332PZ MOSFET. Datasheet pdf. Equivalent
Type Designator: FDG332PZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 2.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.6 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: SC70
FDG332PZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDG332PZ Datasheet (PDF)
fdg332pz.pdf
December 2008FDG332PZtmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VG
fdg332pz.pdf
July 2007FDG332PZ tmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VGS =
fdg330p.pdf
December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2 A, 12 V. RDS(ON) = 110 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 150 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 215 m @ VGS
Datasheet: FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , MMD60R360PRH , FDG410NZ , FDG6301NF085 , FDG6306P , FDG6308P , FDG6316P , FDG6317NZ , FDG6318P , FDG6318PZ .
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