FDG6301NF085 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDG6301NF085  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm

Encapsulados: SC70

  📄📄 Copiar 

 Búsqueda de reemplazo de FDG6301NF085 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDG6301NF085 datasheet

 6.1. Size:346K  fairchild semi
 fdg6301n f085.pdf pdf_icon

FDG6301NF085

March 2009 FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's RDS(ON) = 4 @ VGS= 4.5 V, proprietary, high cell density, DMOS technology. This RDS(ON) = 5 @ VGS= 2.7 V. very high density process is especially tailor

 6.2. Size:103K  fairchild semi
 fdg6301n.pdf pdf_icon

FDG6301NF085

July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's RDS(ON) = 4 @ VGS= 4.5 V, proprietary, high cell density, DMOS technology. This RDS(ON) = 5 @ VGS= 2.7 V. very high density process is especially tailored to

 6.3. Size:268K  onsemi
 fdg6301n.pdf pdf_icon

FDG6301NF085

Digital FET, Dual N-Channel FDG6301N General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell density, DMOS technology. This very high density process is www.onsemi.com especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applicati

 6.4. Size:1052K  kexin
 fdg6301n.pdf pdf_icon

FDG6301NF085

SMD Type MOSFET Dual N-Channel MOSFET FDG6301N (KDG6301N) Features VDS (V) = 25V ID = 220m A (VGS = 4.5V) RDS(ON) 4 (VGS = 4.5V) RDS(ON) 5 (VGS = 2.7V) Gate-Source Zener for ESD ruggedness 1 S 1 S1 4 S2 (>6kV Human Body Model). 2 G1 2 G1 5 G2 3 D2 3 D2 6 D1 1 or 4 6 or 3 2 or 5 5 or 2 4 or 1 3 or 6 Absolute Maximum Ratings T

MOSTRAR MÁS

Otros transistores... FDD8N50NZ, FDG1024NZ, FDG327N, FDG327NZ, FDG328P, FDG330P, FDG332PZ, FDG410NZ, IRF730, FDG6306P, FDG6308P, FDG6316P, FDG6317NZ, FDG6318P, FDG6318PZ, FDG6320C, STS4501