FDG6301NF085 - параметры транзистора MOSFET, его аналоги, datasheet

FDG6301NF085 Datasheet (PDF)

6.1. Size:346K fairchild semi
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March 2009 FDG6301N_F085 Dual N-Channel, Digital FETGeneral Description Features25 V, 0.22 A continuous, 0.65 A peak.These dual N-Channel logic level enhancement modefield effect transistors are produced using Fairchild's RDS(ON) = 4 @ VGS= 4.5 V,proprietary, high cell density, DMOS technology. ThisRDS(ON) = 5 @ VGS= 2.7 V.very high density process is especially tailor

6.2. Size:103K fairchild semi
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July 1999 FDG6301N Dual N-Channel, Digital FETGeneral Description Features25 V, 0.22 A continuous, 0.65 A peak.These dual N-Channel logic level enhancement modefield effect transistors are produced using Fairchild's RDS(ON) = 4 @ VGS= 4.5 V,proprietary, high cell density, DMOS technology. ThisRDS(ON) = 5 @ VGS= 2.7 V.very high density process is especially tailored to

6.3. Size:268K onsemi
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Digital FET, Dual N-ChannelFDG6301NGeneral DescriptionThese dual N-Channel logic level enhancement mode field effecttransistors are produced using ON Semiconductors proprietary, highcell density, DMOS technology. This very high density process iswww.onsemi.comespecially tailored to minimize on-state resistance. This device hasbeen designed especially for low voltage applicati

6.4. Size:1052K kexin
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SMD Type MOSFETDual N-Channel MOSFETFDG6301N (KDG6301N) Features VDS (V) = 25V ID = 220m A (VGS = 4.5V) RDS(ON) 4 (VGS = 4.5V) RDS(ON) 5 (VGS = 2.7V) Gate-Source Zener for ESD ruggedness1 S1 S1 4 S2(>6kV Human Body Model).2 G12 G1 5 G23 D2 3 D2 6 D1 1 or 4 6 or 3 2 or 5 5 or 24 or 1 3 or 6 Absolute Maximum Ratings T

Другие MOSFET... FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ , FDG410NZ , IRF520 , FDG6306P , FDG6308P , FDG6316P , FDG6317NZ , FDG6318P , FDG6318PZ , FDG6320C , STS4501 .