STS3623 Todos los transistores

S TS 3623 S amHop Microelectronics C orp. J un, 09 2006 Dual N-Channel Enhancement Mode Field Effect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 50 @ VG S = 10V 30V 4A S OT-26 package. 65 @ VG S = 4.5V D2 D1 S OT26 Top View G1 D1 6 1 S 2 S 1 2 5 G2 3 4 G1 G2 D2 S 2

Green Product STS3620 a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 86 @ VGS=10V Suface Mount Package. 30V 2.6A 100 @ VGS=4.5V ESD Protected. 128 @ VGS=2.5V D1 D2 TSOT 26 Top View S1 1 6 G1 G 1 G 2 2

S TS 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 50 @ VG S = 10V 90 @ VG S = -10V 3A 30V -30V -2A 65 @ VG S = 4.5V 135 @ VG S = -4.5V D1 D2 S OT 26 Top View G1 D1 6 1 S 2 2 5