S TS 3623S amHop Microelectronics C orp.J un, 09 2006Dual N-Channel Enhancement Mode Field Effect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.50 @ VG S = 10V30V 4AS OT-26 package.65 @ VG S = 4.5VD2D1S OT26Top ViewG1D161S 2 S 12 5G234 G1G2 D2S 2

GreenProductSTS3620aS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.86 @ VGS=10VSuface Mount Package.30V 2.6A 100 @ VGS=4.5V ESD Protected.128 @ VGS=2.5V D1 D2 TSOT 26Top ViewS1 1 6 G1G 1 G 2 2

S TS 3621S amHop Microelectronics C orp.Oct. 24 2006Dual Enhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max50 @ VG S = 10V 90 @ VG S = -10V3A30V -30V -2A65 @ VG S = 4.5V 135 @ VG S = -4.5VD1 D2S OT 26Top ViewG1D161S 2 2 5