FDG6332CF085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDG6332CF085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: SC70

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FDG6332CF085 Datasheet (PDF)

6.1. Size:93K fairchild semi
fdg6332c.pdf

September 2003FDG6332C20V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThe N & P-Channel MOSFETs are produced using Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 400 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

6.2. Size:279K fairchild semi
fdg6332c f085.pdf

March 2009FDG6332C_F08520V N & P-Channel PowerTrench MOSFETsFeatures General DescriptionThe N & P-Channel MOSFETs are produced using Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 400 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

6.3. Size:277K onsemi
fdg6332c.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.4. Size:278K onsemi
fdg6332c-f085.pdf

FDG6332C-F08520V N & P-Channel PowerTrench MOSFETsGeneral DescriptionFeaturesThe N & P-Channel MOSFETs are produced using Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 VON Semiconductors advanced PowerTrench RDS(ON) = 400 m @ VGS = 2.5 Vprocess that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Otros transistores... FDG6320C , STS4501 , FDG6321C , STS4300 , FDG6322C , STS400 , FDG6332C , STS3623 , IRFP064N , STS3621 , FDG6335N , FDG8842CZ , STS3620 , STS3429 , STS3426 , FDG8850NZ , FDH038AN08A1 .

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