FDG6332CF085 Specs and Replacement
Type Designator: FDG6332CF085
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SC70
FDG6332CF085 substitution
- MOSFET ⓘ Cross-Reference Search
FDG6332CF085 datasheet
fdg6332c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDG6320C , STS4501 , FDG6321C , STS4300 , FDG6322C , STS400 , FDG6332C , STS3623 , RU7088R , STS3621 , FDG6335N , FDG8842CZ , STS3620 , STS3429 , STS3426 , FDG8850NZ , FDH038AN08A1 .
History: STS3429
Keywords - FDG6332CF085 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STS3429
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