FDG6335N Todos los transistores

 

FDG6335N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDG6335N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SC70
 

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FDG6335N datasheet

 ..1. Size:66K  fairchild semi
 fdg6335n.pdf pdf_icon

FDG6335N

October 2001 FDG6335N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 0.7 A, 20 V. RDS(ON) = 300 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 400 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized use Low gat

 ..2. Size:183K  onsemi
 fdg6335n.pdf pdf_icon

FDG6335N

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:93K  fairchild semi
 fdg6332c.pdf pdf_icon

FDG6335N

 8.2. Size:279K  fairchild semi
 fdg6332c f085.pdf pdf_icon

FDG6335N

MOSTRAR MÁS

Otros transistores... FDG6321C , STS4300 , FDG6322C , STS400 , FDG6332C , STS3623 , FDG6332CF085 , STS3621 , AOD4184A , FDG8842CZ , STS3620 , STS3429 , STS3426 , FDG8850NZ , FDH038AN08A1 , FDH047AN08A0 , FDH055N15A .

History: FDC658AP | STS4501 | FDG6318PZ

 

 

 


 
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