Справочник MOSFET. FDG6335N

 

FDG6335N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDG6335N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 0.7 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 1.1 nC
   Сопротивление сток-исток открытого транзистора (Rds): 0.3 Ohm
   Тип корпуса: SC70

 Аналог (замена) для FDG6335N

 

 

FDG6335N Datasheet (PDF)

 ..1. Size:66K  fairchild semi
 fdg6335n.pdf

FDG6335N FDG6335N

October 2001FDG6335N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 0.7 A, 20 V. RDS(ON) = 300 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 400 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized use Low gat

 ..2. Size:183K  onsemi
 fdg6335n.pdf

FDG6335N FDG6335N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:93K  fairchild semi
 fdg6332c.pdf

FDG6335N FDG6335N

September 2003FDG6332C20V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThe N & P-Channel MOSFETs are produced using Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 400 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

 8.2. Size:279K  fairchild semi
 fdg6332c f085.pdf

FDG6335N FDG6335N

March 2009FDG6332C_F08520V N & P-Channel PowerTrench MOSFETsFeatures General DescriptionThe N & P-Channel MOSFETs are produced using Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 400 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

 8.3. Size:277K  onsemi
 fdg6332c.pdf

FDG6335N FDG6335N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:278K  onsemi
 fdg6332c-f085.pdf

FDG6335N FDG6335N

FDG6332C-F08520V N & P-Channel PowerTrench MOSFETsGeneral DescriptionFeaturesThe N & P-Channel MOSFETs are produced using Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 VON Semiconductors advanced PowerTrench RDS(ON) = 400 m @ VGS = 2.5 Vprocess that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

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