8N60G-TF1-T Todos los transistores

 

8N60G-TF1-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 8N60G-TF1-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60.5 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220F
 

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8N60G-TF1-T Datasheet (PDF)

 ..1. Size:238K  utc
 8n60l-ta3-t 8n60g-ta3-t 8n60l-tf1-t 8n60g-tf1-t 8n60l-tf2-t 8n60g-tf2-t 8n60l-tf3-t 8n60g-tf3-t 8n60l-t2q-t 8n60g-t2q-t.pdf pdf_icon

8N60G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

 9.1. Size:815K  ncepower
 nceap018n60gu.pdf pdf_icon

8N60G-TF1-T

NCEAP018N60GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power E

 9.2. Size:1124K  ncepower
 ncep018n60gu.pdf pdf_icon

8N60G-TF1-T

NCEP018N60GUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60GU uses Super Trench II technology that is V =60V,I =195ADS Duniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

Otros transistores... 8N60KG-TF2-T , 8N60KL-TF3-T , 8N60KG-TF3-T , 8N60KL-TF3T-T , 8N60KG-TF3T-T , 8N60L-TA3-T , 8N60G-TA3-T , 8N60L-TF1-T , 18N50 , 8N60L-TF2-T , 8N60G-TF2-T , 8N60L-TF3-T , 8N60G-TF3-T , 8N60L-T2Q-T , 8N60G-T2Q-T , 8N65KL-TA3-T , 8N65KG-TA3-T .

History: DHB8290 | SFF60P05M | AP15P10GJ-HF | IRFMA450 | BSC022N04LS | STB34N65M5 | SSM3K09FU

 

 
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