Справочник MOSFET. 8N60G-TF1-T

 

8N60G-TF1-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 8N60G-TF1-T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 28 nC
   trⓘ - Время нарастания: 60.5 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 8N60G-TF1-T

 

 

8N60G-TF1-T Datasheet (PDF)

 ..1. Size:238K  utc
 8n60l-ta3-t 8n60g-ta3-t 8n60l-tf1-t 8n60g-tf1-t 8n60l-tf2-t 8n60g-tf2-t 8n60l-tf3-t 8n60g-tf3-t 8n60l-t2q-t 8n60g-t2q-t.pdf

8N60G-TF1-T 8N60G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

 9.1. Size:815K  ncepower
 nceap018n60gu.pdf

8N60G-TF1-T 8N60G-TF1-T

NCEAP018N60GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power E

 9.2. Size:1124K  ncepower
 ncep018n60gu.pdf

8N60G-TF1-T 8N60G-TF1-T

NCEP018N60GUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60GU uses Super Trench II technology that is V =60V,I =195ADS Duniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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