8N60G-TF1-T Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 8N60G-TF1-T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 60.5 ns
Cossⓘ - Выходная емкость: 105 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO220F
8N60G-TF1-T Datasheet (PDF)
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Другие MOSFET... 8N60KG-TF2-T , 8N60KL-TF3-T , 8N60KG-TF3-T , 8N60KL-TF3T-T , 8N60KG-TF3T-T , 8N60L-TA3-T , 8N60G-TA3-T , 8N60L-TF1-T , 18N50 , 8N60L-TF2-T , 8N60G-TF2-T , 8N60L-TF3-T , 8N60G-TF3-T , 8N60L-T2Q-T , 8N60G-T2Q-T , 8N65KL-TA3-T , 8N65KG-TA3-T .



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