8N65KG-TM3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching

UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching

SW38N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 79m Low RDS(ON) (Typ 79m)@VGS=10V Low Gate Charge (Typ 71nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , Servicer, UPS 1. Gate 2. Drain 3. Source 3 General Description This

SW8N65K N-channel Enhanced mode TO-262 MOSFET Features BVDSS : 650V TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.53)@VGS=10V RDS(ON) : 0.53 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 Application:LED,Charger,PC Power 2 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOS

SW38N65K N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 0.09)@VGS=10V RDS(ON) :0.09 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application:ChargerLEDUPSServicer 1. Gate 2. Drain 3. Source 3 General Description

SW38N65K2F N-channel Enhanced mode TO-247/TO-220FB MOSFET Features TO-247 TO-220FB BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 83m)@VGS=10V RDS(ON) : 83m Low Gate Charge (Typ 71nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 1 3 3 Application: Charge, LED , Servicer, UPS 1. Gate 2. Drain 3. Source Gener

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charge, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This p

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This

HMS8N65I, HMS8N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.