8N65KG-TM3-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 8N65KG-TM3-T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 62 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 23 nC
Время нарастания (tr): 68 ns
Выходная емкость (Cd): 88 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
Тип корпуса: TO251
Аналог (замена) для 8N65KG-TM3-T
8N65KG-TM3-T Datasheet (PDF)
8n65kl-tf3t-t 8n65kg-tf3t-t 8n65kl-tm3-t 8n65kg-tm3-t 8n65kl-tms-t 8n65kg-tms-t 8n65kl-tn3-r 8n65kg-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching
8n65kl-ta3-t 8n65kg-ta3-t 8n65kl-tf3-t 8n65kg-tf3-t 8n65kl-tf1-t 8n65kg-tf1-t 8n65kl-tf2-t 8n65kg-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching
swt38n65k2.pdf
SW38N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 79m Low RDS(ON) (Typ 79m)@VGS=10V Low Gate Charge (Typ 71nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , Servicer, UPS 1. Gate 2. Drain 3. Source 3 General Description This
swu8n65k.pdf
SW8N65K N-channel Enhanced mode TO-262 MOSFET Features BVDSS : 650V TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.53)@VGS=10V RDS(ON) : 0.53 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 Application:LED,Charger,PC Power 2 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOS
swt38n65k.pdf
SW38N65K N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 0.09)@VGS=10V RDS(ON) :0.09 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application:ChargerLEDUPSServicer 1. Gate 2. Drain 3. Source 3 General Description
swt38n65k2f swx38n65k2f.pdf
SW38N65K2F N-channel Enhanced mode TO-247/TO-220FB MOSFET Features TO-247 TO-220FB BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 83m)@VGS=10V RDS(ON) : 83m Low Gate Charge (Typ 71nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 1 3 3 Application: Charge, LED , Servicer, UPS 1. Gate 2. Drain 3. Source Gener
sw38n65kf swt38n65kf.pdf
SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charge, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This p
swt38n65kf.pdf
SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This
hms8n65k hms8n65i.pdf
HMS8N65I, HMS8N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: 4N65G-TM3-T
