FDG8850NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDG8850NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 1.03 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: SC70

Búsqueda de reemplazo de MOSFET FDG8850NZ

FDG8850NZ Datasheet (PDF)

..1. Size:327K fairchild semi
fdg8850nz.pdf

April 2007FDG8850NZtmDual N-Channel PowerTrench MOSFET 30V,0.75A,0.4Features General DescriptionThis dual N-Channel logic level enhancement mode field effect Max rDS(on) = 0.4 at VGS = 4.5V, ID = 0.75Atransistors are produced using Fairchilds proprietary, high cell Max rDS(on) = 0.5 at VGS = 2.7V, ID = 0.67Adensity, DMOS technology. This very high density proces

..2. Size:438K onsemi
fdg8850nz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:455K fairchild semi
fdg8842cz.pdf

April 2007FDG8842CZ tmComplementary PowerTrench MOSFET Q1:30V,0.75A,0.4; Q2:25V,0.41A,1.1Features General DescriptionThese N & P-Channel logic level enhancement mode field effect Q1: N-Channeltransistors are produced using Fairchilds proprietary, high cell Max rDS(on) = 0.4 at VGS = 4.5V, ID = 0.75Adensity, DMOS technology. This very high density process is

9.2. Size:489K onsemi
fdg8842cz.pdf

FDG8842CZ Complementary PowerTrench MOSFETQ1:30V,0.75A,0.4; Q2:25V,0.41A,1.1FeaturesGeneral DescriptionQ1: N-ChannelThese N & P-Channel logic level enhancement mode field Max rDS(on) = 0.4 at VGS = 4.5V, ID = 0.75Aeffect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. This very Max rDS(on) = 0.5 at VGS =

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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