All MOSFET. FDG8850NZ Datasheet

 

FDG8850NZ MOSFET. Datasheet pdf. Equivalent

Type Designator: FDG8850NZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 0.75 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: SC70

FDG8850NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDG8850NZ Datasheet (PDF)

1.1. fdg8850nz.pdf Size:327K _fairchild_semi

FDG8850NZ
FDG8850NZ

April 2007 FDG8850NZ tm Dual N-Channel PowerTrench® MOSFET 30V,0.75A,0.4? Features General Description This dual N-Channel logic level enhancement mode field effect Max rDS(on) = 0.4? at VGS = 4.5V, ID = 0.75A transistors are produced using Fairchild’s proprietary, high cell Max rDS(on) = 0.5? at VGS = 2.7V, ID = 0.67A density, DMOS technology. This very high density process is V

5.1. fdg8842cz.pdf Size:455K _fairchild_semi

FDG8850NZ
FDG8850NZ

April 2007 FDG8842CZ tm Complementary PowerTrench® MOSFET Q1:30V,0.75A,0.4?; Q2:–25V,–0.41A,1.1? Features General Description These N & P-Channel logic level enhancement mode field effect Q1: N-Channel transistors are produced using Fairchild’s proprietary, high cell Max rDS(on) = 0.4? at VGS = 4.5V, ID = 0.75A density, DMOS technology. This very high density process is Max rDS(o

Datasheet: STS3623 , FDG6332C_F085 , STS3621 , FDG6335N , FDG8842CZ , STS3620 , STS3429 , STS3426 , APT50M38JFLL , FDH038AN08A1 , FDH047AN08A0 , FDH055N15A , FDH3632 , STS3411A , FDH44N50 , FDH45N50F_F133 , FDH5500_F085 .

 


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