FDH047AN08A0 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDH047AN08A0 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 310 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
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FDH047AN08A0 datasheet
fdp047an08a0 fdi047an08a0 fdh047an08a0.pdf
June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7m Features Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys
fdp047an08a0 fdh047an08a0.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdh047an08a0.pdf
isc N-Channel MOSFET Transistor FDH047AN08A0 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 4.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
Otros transistores... STS3621, FDG6335N, FDG8842CZ, STS3620, STS3429, STS3426, FDG8850NZ, FDH038AN08A1, IRFZ44N, FDH055N15A, FDH3632, STS3411A, FDH44N50, FDH45N50FF133, FDH5500F085, FDI030N06, FDI038AN06A0
Parámetros del MOSFET. Cómo se afectan entre sí.
History: FDMA6023PZT | FDI030N06
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