FDH047AN08A0 Datasheet and Replacement
Type Designator: FDH047AN08A0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: TO247 TO3P TO3PF
FDH047AN08A0 substitution
FDH047AN08A0 Datasheet (PDF)
fdp047an08a0 fdi047an08a0 fdh047an08a0.pdf

June 2004FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0N-Channel PowerTrench MOSFET75V, 80A, 4.7mFeatures Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys
fdp047an08a0 fdh047an08a0.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdh047an08a0.pdf

isc N-Channel MOSFET Transistor FDH047AN08A0FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Datasheet: STS3621 , FDG6335N , FDG8842CZ , STS3620 , STS3429 , STS3426 , FDG8850NZ , FDH038AN08A1 , IRF3205 , FDH055N15A , FDH3632 , STS3411A , FDH44N50 , FDH45N50FF133 , FDH5500F085 , FDI030N06 , FDI038AN06A0 .
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