FDH047AN08A0 Datasheet. Specs and Replacement
Type Designator: FDH047AN08A0 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
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FDH047AN08A0 substitution
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FDH047AN08A0 datasheet
fdp047an08a0 fdi047an08a0 fdh047an08a0.pdf
June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7m Features Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys... See More ⇒
fdp047an08a0 fdh047an08a0.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdh047an08a0.pdf
isc N-Channel MOSFET Transistor FDH047AN08A0 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 4.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
Detailed specifications: STS3621, FDG6335N, FDG8842CZ, STS3620, STS3429, STS3426, FDG8850NZ, FDH038AN08A1, IRFZ44N, FDH055N15A, FDH3632, STS3411A, FDH44N50, FDH45N50FF133, FDH5500F085, FDI030N06, FDI038AN06A0
Keywords - FDH047AN08A0 MOSFET specs
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