UF830L-TQ2-R Todos los transistores

 

UF830L-TQ2-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UF830L-TQ2-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

UF830L-TQ2-R Datasheet (PDF)

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 uf830l-tms-t uf830g-tms-t uf830l-tn3-r uf830g-tn3-r uf830l-t2q-t uf830g-t2q-t uf830l-tq2-r uf830g-tq2-r uf830l-tq2-t uf830g-tq2-t.pdf pdf_icon

UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 6.1. Size:315K  utc
 uf830l-ta3-t uf830g-ta3-t uf830l-tf3-t uf830g-tf3-t uf830l-tf1-t uf830g-tf1-t uf830l-tf2-t uf830g-tf2-t uf830l-tm3-t uf830g-tm3-t.pdf pdf_icon

UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 9.1. Size:274K  utc
 uf830z.pdf pdf_icon

UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers andrelated drivers. FEATURES * VDS = 500V * ID =

 9.2. Size:284K  utc
 uf830.pdf pdf_icon

UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 FEATURES TO-220F1* 4.

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SMC3407 | BLF6G27-100 | HCFL60R190

 

 
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