Справочник MOSFET. UF830L-TQ2-R

 

UF830L-TQ2-R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: UF830L-TQ2-R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 73 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO263

 Аналог (замена) для UF830L-TQ2-R

 

 

UF830L-TQ2-R Datasheet (PDF)

 ..1. Size:315K  utc
 uf830l-tms-t uf830g-tms-t uf830l-tn3-r uf830g-tn3-r uf830l-t2q-t uf830g-t2q-t uf830l-tq2-r uf830g-tq2-r uf830l-tq2-t uf830g-tq2-t.pdf

UF830L-TQ2-R UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 6.1. Size:315K  utc
 uf830l-ta3-t uf830g-ta3-t uf830l-tf3-t uf830g-tf3-t uf830l-tf1-t uf830g-tf1-t uf830l-tf2-t uf830g-tf2-t uf830l-tm3-t uf830g-tm3-t.pdf

UF830L-TQ2-R UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 9.1. Size:274K  utc
 uf830z.pdf

UF830L-TQ2-R UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers andrelated drivers. FEATURES * VDS = 500V * ID =

 9.2. Size:284K  utc
 uf830.pdf

UF830L-TQ2-R UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 FEATURES TO-220F1* 4.

 9.3. Size:251K  utc
 uf830kl-ta3-t uf830kg-ta3-t uf830kl-tf3-t uf830kg-tf3-t uf830kl-tf2-t uf830kg-tf2-t uf830kl-tn3-r uf830kg-tn3-r.pdf

UF830L-TQ2-R UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F FEATURES *

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top