UF830L-TQ2-R. Аналоги и основные параметры

Наименование производителя: UF830L-TQ2-R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 73 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm

Тип корпуса: TO263

Аналог (замена) для UF830L-TQ2-R

- подборⓘ MOSFET транзистора по параметрам

 

UF830L-TQ2-R даташит

 ..1. Size:315K  utc
 uf830l-tms-t uf830g-tms-t uf830l-tn3-r uf830g-tn3-r uf830l-t2q-t uf830g-t2q-t uf830l-tq2-r uf830g-tq2-r uf830l-tq2-t uf830g-tq2-t.pdf pdf_icon

UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5 , N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 6.1. Size:315K  utc
 uf830l-ta3-t uf830g-ta3-t uf830l-tf3-t uf830g-tf3-t uf830l-tf1-t uf830g-tf1-t uf830l-tf2-t uf830g-tf2-t uf830l-tm3-t uf830g-tm3-t.pdf pdf_icon

UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5 , N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 9.1. Size:274K  utc
 uf830z.pdf pdf_icon

UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5 , N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220F designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. FEATURES * VDS = 500V * ID =

 9.2. Size:284K  utc
 uf830.pdf pdf_icon

UF830L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5 , N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220F designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 FEATURES TO-220F1 * 4.

ПОКАЗАТЬ ЕЩЁ

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