2SK2519-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2519-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET 2SK2519-01

2SK2519-01 Datasheet (PDF)

..1. Size:153K 1
2sk2519-01.pdf

N-channel MOS-FET2SK2519-01FAP-II Series 200V 0,4 10A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva

8.1. Size:119K 1
2sk2515.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2515SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2515 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 9 m (VGS = 10 V, ID = 25 A)RDS (on)2 = 14 m

8.2. Size:114K 1
2sk2511.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2511SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2511 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 27 m (VGS = 10 V, ID = 20 A)RDS (on)2 = 40 m

8.3. Size:81K 1
2sk2512.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2512SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2512 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on)1 = 15 m (VGS = 10 V, ID = 23 A)RDS (on)2 = 23 m (V

8.4. Size:80K 1
2sk2510.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2510SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2510 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.FEATURES10.00.3 4.50.23.20.2 Super Low On-Resistance2.70.2RDS (on)1 = 20 m (VGS = 10 V, ID = 20 A)RDS (on)2 = 30 m

8.5. Size:89K 1
2sk2514.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2514SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2514 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 15 m (VGS = 10 V, ID = 25 A)RDS (on)2 23

8.6. Size:114K nec
2sk2513-z.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2513, 2SK2513-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Tran-(in millimeters)sistor designed for high current switching applications.10.6 MAX. 4.8 MAX.FEATURES3.6 0.21.3 0.210.0 Low On-ResistanceRDS(on)1 = 15 m (VGS = 10 V,

8.7. Size:145K fuji
2sk2518-01mr.pdf

N-channel MOS-FET2SK2518-01MRFAP-IIA Series 200V 0,13 20A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Eq

Otros transistores... 2SK2498 , 2SK2499 , 2SK2510 , 2SK2511 , 2SK2512 , 2SK2513 , 2SK2514 , 2SK2515 , IRF3205 , 2SK2520-01MR , 2SK2521-01 , 2SK2522-01MR , 2SK2523-01 , 2SK2524-01MR , 2SK2525-01 , 2SK2529 , 2SK2541 .

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