2SK2519-01 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2519-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220AB
2SK2519-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2519-01 Datasheet (PDF)
2sk2519-01.pdf
N-channel MOS-FET2SK2519-01FAP-II Series 200V 0,4 10A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva
2sk2515.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2515SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2515 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 9 m (VGS = 10 V, ID = 25 A)RDS (on)2 = 14 m
2sk2511.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2511SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2511 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 27 m (VGS = 10 V, ID = 20 A)RDS (on)2 = 40 m
2sk2512.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2512SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2512 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on)1 = 15 m (VGS = 10 V, ID = 23 A)RDS (on)2 = 23 m (V
2sk2510.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2510SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2510 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.FEATURES10.00.3 4.50.23.20.2 Super Low On-Resistance2.70.2RDS (on)1 = 20 m (VGS = 10 V, ID = 20 A)RDS (on)2 = 30 m
2sk2514.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2514SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2514 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 15 m (VGS = 10 V, ID = 25 A)RDS (on)2 23
2sk2513-z.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2513, 2SK2513-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Tran-(in millimeters)sistor designed for high current switching applications.10.6 MAX. 4.8 MAX.FEATURES3.6 0.21.3 0.210.0 Low On-ResistanceRDS(on)1 = 15 m (VGS = 10 V,
2sk2518-01mr.pdf
N-channel MOS-FET2SK2518-01MRFAP-IIA Series 200V 0,13 20A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Eq
Datasheet: 2SK2498 , 2SK2499 , 2SK2510 , 2SK2511 , 2SK2512 , 2SK2513 , 2SK2514 , 2SK2515 , IRF3205 , 2SK2520-01MR , 2SK2521-01 , 2SK2522-01MR , 2SK2523-01 , 2SK2524-01MR , 2SK2525-01 , 2SK2529 , 2SK2541 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918