UK3018G-AE2-R Todos los transistores

 

UK3018G-AE2-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UK3018G-AE2-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

UK3018G-AE2-R Datasheet (PDF)

 ..1. Size:136K  utc
uk3018g-ae2-r uk3018g-al3-r.pdf pdf_icon

UK3018G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low voltage and low current applications such as small servo motor contro

 8.1. Size:136K  utc
uk3018.pdf pdf_icon

UK3018G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low voltage and low current applications such as small servo motor contro

 9.1. Size:349K  1
suk3015.pdf pdf_icon

UK3018G-AE2-R

VDSS = 300 V, RDS(ON) = 0.15 N-channel Power MOSFET SUK3015 Data Sheet Description Package SUK3015 includes a low on-resistance N-channel TO220S power MOSFET with zener diode for ESD protection. The package of SUK3015 is TO220S that is surface (4) (4) mount package and high heat release. Features Automotive Qualified Low On Resistance (1) (2) (3) (3) (2) (1)

 9.2. Size:127K  utc
uk3019.pdf pdf_icon

UK3018G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UK3019 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION 3The UTC UK3019 is a silicon N-channel MOSFET which has been designed to minimize on-state resistance while it provides1rugged, reliable and fast switching performance. The product is 2particularly suited for low voltage, low current applications suchas small

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CS2N70HU | SMP40N10 | VS40200AT | DMC2041UFDB | BRCS030N03ZC | IXFT14N80P | IRF624A

 

 
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