UK3018G-AE2-R MOSFET. Datasheet pdf. Equivalent
Type Designator: UK3018G-AE2-R
Marking Code: 3018G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT23
UK3018G-AE2-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UK3018G-AE2-R Datasheet (PDF)
uk3018g-ae2-r uk3018g-al3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low voltage and low current applications such as small servo motor contro
uk3018.pdf
UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low voltage and low current applications such as small servo motor contro
suk3015.pdf
VDSS = 300 V, RDS(ON) = 0.15 N-channel Power MOSFET SUK3015 Data Sheet Description Package SUK3015 includes a low on-resistance N-channel TO220S power MOSFET with zener diode for ESD protection. The package of SUK3015 is TO220S that is surface (4) (4) mount package and high heat release. Features Automotive Qualified Low On Resistance (1) (2) (3) (3) (2) (1)
uk3019.pdf
UNISONIC TECHNOLOGIES CO., LTD UK3019 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION 3The UTC UK3019 is a silicon N-channel MOSFET which has been designed to minimize on-state resistance while it provides1rugged, reliable and fast switching performance. The product is 2particularly suited for low voltage, low current applications suchas small
suk3015.pdf
isc N-Channel MOSFET Transistor SUK3015FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 150m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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