UT20N03G-K08-5060-R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UT20N03G-K08-5060-R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 21 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: DFN8-5X6

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UT20N03G-K08-5060-R datasheet

 0.1. Size:257K  utc
 ut20n03l-tn3-r ut20n03g-tn3-r ut20n03g-k08-5060-r.pdf pdf_icon

UT20N03G-K08-5060-R

UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON)

 7.1. Size:252K  utc
 ut20n03.pdf pdf_icon

UT20N03G-K08-5060-R

UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 20m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8 U

 7.2. Size:261K  inchange semiconductor
 ut20n03.pdf pdf_icon

UT20N03G-K08-5060-R

Isc N-Channel MOSFET Transistor UT20N03 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

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