UT20N03G-K08-5060-R Specs and Replacement
Type Designator: UT20N03G-K08-5060-R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN8-5X6
UT20N03G-K08-5060-R substitution
- MOSFET ⓘ Cross-Reference Search
UT20N03G-K08-5060-R datasheet
ut20n03l-tn3-r ut20n03g-tn3-r ut20n03g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) ... See More ⇒
ut20n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 20m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8 U... See More ⇒
ut20n03.pdf
Isc N-Channel MOSFET Transistor UT20N03 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒
Detailed specifications: UT100N03G-TND-R, UT100N03L-TQ2-T, UT100N03G-TQ2-T, UT100N03L-TQ2-R, UT100N03G-TQ2-R, UT100N03G-K08-5060-R, UT20N03L-TN3-R, UT20N03G-TN3-R, IRFP250N, UT2301G-AE2-R, UT2302G-AE2-R, UT2302G-AE3-R, UT2305G-AE2-R, UT2305G-AE3-R, UT2305G-AG3-R, UT2305L-AE2-R, UT2305L-AE3-R
Keywords - UT20N03G-K08-5060-R MOSFET specs
UT20N03G-K08-5060-R cross reference
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UT20N03G-K08-5060-R substitution
UT20N03G-K08-5060-R replacement
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