UT2302G-AE2-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UT2302G-AE2-R
Código: 23BG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 2.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.45(min) V
Carga de la puerta (Qg): 5.2 nC
Tiempo de subida (tr): 55 nS
Conductancia de drenaje-sustrato (Cd): 70 pF
Resistencia entre drenaje y fuente RDS(on): 0.05 Ohm
Paquete / Cubierta: SOT23
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UT2302G-AE2-R Datasheet (PDF)
ut2302g-ae2-r ut2302g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applicationsand suited for low voltage applications such a
ut2302g-ae3.pdf
UT2302G-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
ut2302.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications andsuited for low voltage applications such as
ut2302l-ae3.pdf
UT2302L-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .