UT2302G-AE2-R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UT2302G-AE2-R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOT23

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UT2302G-AE2-R datasheet

 ..1. Size:288K  utc
 ut2302g-ae2-r ut2302g-ae3-r.pdf pdf_icon

UT2302G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such a

 4.1. Size:1511K  cn vbsemi
 ut2302g-ae3.pdf pdf_icon

UT2302G-AE2-R

UT2302G-AE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/

 8.1. Size:269K  utc
 ut2302.pdf pdf_icon

UT2302G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as

 8.2. Size:911K  cn vbsemi
 ut2302l-ae3.pdf pdf_icon

UT2302G-AE2-R

UT2302L-AE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/

MOSTRAR MÁS

Otros transistores... UT100N03G-TQ2-T, UT100N03L-TQ2-R, UT100N03G-TQ2-R, UT100N03G-K08-5060-R, UT20N03L-TN3-R, UT20N03G-TN3-R, UT20N03G-K08-5060-R, UT2301G-AE2-R, IRF9540, UT2302G-AE3-R, UT2305G-AE2-R, UT2305G-AE3-R, UT2305G-AG3-R, UT2305L-AE2-R, UT2305L-AE3-R, UT2305L-AL3-R, UT2316G-AE2-R