All MOSFET. UT2302G-AE2-R Datasheet

 

UT2302G-AE2-R Datasheet and Replacement


   Type Designator: UT2302G-AE2-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
 

 UT2302G-AE2-R substitution

   - MOSFET ⓘ Cross-Reference Search

 

UT2302G-AE2-R Datasheet (PDF)

 ..1. Size:288K  utc
ut2302g-ae2-r ut2302g-ae3-r.pdf pdf_icon

UT2302G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applicationsand suited for low voltage applications such a

 4.1. Size:1511K  cn vbsemi
ut2302g-ae3.pdf pdf_icon

UT2302G-AE2-R

UT2302G-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

 8.1. Size:269K  utc
ut2302.pdf pdf_icon

UT2302G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications andsuited for low voltage applications such as

 8.2. Size:911K  cn vbsemi
ut2302l-ae3.pdf pdf_icon

UT2302G-AE2-R

UT2302L-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

Datasheet: UT100N03G-TQ2-T , UT100N03L-TQ2-R , UT100N03G-TQ2-R , UT100N03G-K08-5060-R , UT20N03L-TN3-R , UT20N03G-TN3-R , UT20N03G-K08-5060-R , UT2301G-AE2-R , K3569 , UT2302G-AE3-R , UT2305G-AE2-R , UT2305G-AE3-R , UT2305G-AG3-R , UT2305L-AE2-R , UT2305L-AE3-R , UT2305L-AL3-R , UT2316G-AE2-R .

History: IRFH7184 | AP10TN135H | 2SK2849L | AP2334GN-HF | PJS6811 | AP2451GY | SI3420A

Keywords - UT2302G-AE2-R MOSFET datasheet

 UT2302G-AE2-R cross reference
 UT2302G-AE2-R equivalent finder
 UT2302G-AE2-R lookup
 UT2302G-AE2-R substitution
 UT2302G-AE2-R replacement

 

 
Back to Top

 


 
.