UT3401G-AE3-R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UT3401G-AE3-R

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.2 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOT23

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UT3401G-AE3-R datasheet

 ..1. Size:294K  utc
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UT3401G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM app

 8.1. Size:292K  utc
ut3401.pdf pdf_icon

UT3401G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM appli

 8.2. Size:301K  utc
ut3401z.pdf pdf_icon

UT3401G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM app

 8.3. Size:323K  utc
ut3401zl-ae3-r ut3401zg-ae3-r.pdf pdf_icon

UT3401G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM a

Otros transistores... UT2316G-AE3-R, UT2955G-AA3-R, UT2955L-TN3-R, UT2955G-TN3-R, UT3400L-AE2-R, UT3400G-AE2-R, UT3400L-AE3-R, UT3400G-AE3-R, 12N60, UT3401ZL-AE3-R, UT3401ZG-AE3-R, UT3404G-AE3-R, UT3404G-S08-R, UT3N06G-AB3-R, UT3N06G-AE3-R, UT3N06L-TM3-T, UT3N06G-TM3-T