UT3401G-AE3-R Todos los transistores

 

UT3401G-AE3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UT3401G-AE3-R
   Código: 34AG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.4 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 4.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.3 V
   Carga de la puerta (Qg): 9.4 nC
   Tiempo de subida (tr): 3.2 nS
   Conductancia de drenaje-sustrato (Cd): 115 pF
   Resistencia entre drenaje y fuente RDS(on): 0.05 Ohm
   Paquete / Cubierta: SOT23

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UT3401G-AE3-R Datasheet (PDF)

 ..1. Size:294K  utc
ut3401g-ae3-r.pdf

UT3401G-AE3-R
UT3401G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp

 8.1. Size:292K  utc
ut3401.pdf

UT3401G-AE3-R
UT3401G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMappli

 8.2. Size:301K  utc
ut3401z.pdf

UT3401G-AE3-R
UT3401G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp

 8.3. Size:323K  utc
ut3401zl-ae3-r ut3401zg-ae3-r.pdf

UT3401G-AE3-R
UT3401G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMa

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